School of Electronic & Electrical Engineering, College of Information & Communication Engineering
Sungkyunkwan Advanced Institute of Nanotechnology (SAINT)
Alumni
M.S: Ji Hoon Kim
Working: Samsung Electronics
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2020 - 2022 MS Electrical and Computer Engineering, Sungkyunkwan University, Korea
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2013 - 2020 BS Physics, Korea University, Korea
jihoonk-at-skku.edu
Publications
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Jihoon Kim, A. Venkatesan et al. "Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2/MoTe2 Heterostructures" Advanced Science n/a, 2100102 (2021)
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Jihoon Kim et al. "Schottky Diode with Asymmetric Metal Contacts on WS2" Advanced Electronic Materials, 2100941 (2021)
M.S: Yewon Kim
Working: Lam Research
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2019 - 2022 MS Electrical and Computer Engineering, Sungkyunkwan University, Korea
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2017 - 2019 QIM, Automotive Parts Researcher
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2013 - 2017 BS Electronic Engineering, Namseoul University, Korea
ywk315-at-skku.edu
Publications
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Yewon Kim et al. "Improved electrical properties of encapsulated MoTe2 1T' edge contacts via laser irradiation" Materials Science in Semiconductor Processing 153, 107133 (2023)
Annadurai Venkatesan
Office: 23230, 1st Engineering Building
Address: School of Electronic Electrical Engineering, Sungkyunkwan University, Suwon, Korea
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2018 - 2021 Post-Doc, Sungkyunkwan University (SKKU), Suwon, Korea
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2011 - 2017 PhD Physics, Birla Institute of Technology and Science, Pilani, India
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2010 - 2011 MPhil Physics, University of Madras, India
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2007 - 2009 MS Physics, University of Madras, India
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2004 - 2009 BS Physics, Chemistry, Math, University of Madras, India
Publications
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A. Venkatesan et al. “Few-layer PdSe2 based field-effect transistor for photodetectors applications” Materials Science in Semiconductor Processing 115, 105102 (2020)
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Jihoon Kim, A. Venkatesan et al. "Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2/MoTe2 Heterostructures" Advanced Science n/a, 2100102 (2021)
PhD: Vilas Sidhhanath Patil
Working: Assistant Professor, University, India
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2020 - 2021 Post-Doc, Sungkyunkwan University (SKKU), Suwon, Korea
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2019 PhD Electronics, Kavayitri Bahinabai Chaudhari North Maharashtra University, India
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2012 MS Electronics, Kavayitri Bahinabai Chaudhari North Maharashtra University, India
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2009 BS Electronics, Kavayitri Bahinabai Chaudhari North Maharashtra University, India
Publications
- Vilas S Patil et al. "High mobility field-effect transistors based on MoS2 crystal grown by the flux method" Nanotechnology 33845468 (2021)
Servin Rathi
Office: 23230, 1st Engineering Building
Address: School of Electronic Electrical Engineering, Sungkyunkwan University, Suwon, Korea
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2012 - 2020 Research Professor, Sungkyunkwan University (SKKU), Suwon, Korea
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2008 - 2011 PhD Electronic Science, University of Delhi, India
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2005 - 2006 MS (Specialization) Electronics, C.C.S University, India
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2003 - 2005 MS Physics, C.C.S University, India
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1999 - 2003 BS Physics, Chemistry, Math, C.C.S University, India
Publications
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Servin Rathi et al. “Observation of negative differential resistance in mesoscopic graphene oxide devices”Scientific Reports 8 7144 (2018)
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Servin Rathi et al. "Electric-field induced abrupt and multi-step insulator-metal transitions in vanadium dioxide nanobeams" Journal of Nanoscience and Nanotechnology 17 (6), 4247-4250 (2017)
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Servin Rathi et al. "Programmed dielectrophoretic assembly of Pd nanoparticles for conductance control in VO2 nanowires"
Current Applied Physics 17 (3), 351-357 (2017) -
Servin Rathi et al. “Tunable electrical and optical characteristics in monolayer graphene and few-layer MoS2 heterostructure devices” Nano Lett. 15 5017−5024 (2015)
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Servin Rathi et al. "Postfabrication Annealing Effects on Insulator Metal Transitions in VO2 Thin-Film Devices"
ACS Applied Materials & Interfaces 6, 22, 19718-19725 (2014) -
Servin Rathi et al. "Unravelling the switching mechanisms in electric field induced insulator metal transitions in VO2 nanobeams"
Journal of Physics D: Applied Physics 47, 295101 (2014) -
Servin Rathi et al. "Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO2 nanobeams" Applied Physics Letters 103, 203114 (2013)
PhD: Muhammad Atif Khan
Working: Assistant Professor, Air University, Pakistan
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2014 - 2018 MS/PhD Electronic Engineering, Sungkyunkwan (SKKU), Korea
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2007 - 2011 BS Electrical, UET Peshawar, Pakistan
Publications
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Muhammad Atif Khan et al. "Study of oxygen plasma induced modulation of photoconductivity in MoS2 field effect transistor" Superlattices and Microstructures 142, 106507 (2020)
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Muhammad Atif Khan et al. "High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts" Nanotechnology 29, 395201 (2018)
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Muhammad Atif Khan et al. "Tunable electron and hole injection enabled by atomically thin tunneling layer for improved contact resistance and dual channel transport in MoS2/WSe2 van der Waals heterostructure" ACS Appl. Mater. Interfaces 10, 23961 (2018)
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Muhammad Atif Khan et al. "Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2" ACS Chemistry of Materials, January (2018)
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Muhammad Atif Khan et al. "Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in SingleLayer MoS2 Device " ACS App. Mat. and Int. 0, 26983-26989 (2017)
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Muhammad Atif Khan et al. "P-doping and efficient carrier injection induced by graphene oxide for high performing WSe2 rectification devices " Applied Physics Letters 108, 093104 (2016)
Ph.D: Inyeal Lee
Working: Samsung Electronics
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2012 - 2017 Ph.D Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), SKKU
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2010 - 2012 MS Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), SKKU
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2003 - 2010 BS School of Electronic and Electrical Engineering, SKKU
Publications
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S. Rathi, I. Lee et al. "Electric-field induced abrupt and multi-step insulator-metal transitions in vanadium dioxide nanobeams" Journal of Nanoscience and Nanotechnology 17, 4247 (2017)
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Inyeal Lee et al. "Gate‐Tunable Hole and Electron Carrier Transport in Atomically Thin Dual‐Channel WSe2/MoS2 Heterostructure for Ambipolar Field‐Effect Transistors" Advanced Materials 28 (43), 9519-9525 (2016)
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Inyeal Lee et al. "Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe2 field-effect transistor" Nanotechnology 26 (45), 455203 (2015)
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Inyeal Lee et al. "Poly-4-vinylphenol and poly (melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics" Nanoscale 6 (7), 3830-3836 (2014)
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Inyeal Lee et al. "Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter" Organic Electronics 14 (6), 1586-1590 (2013)
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Inyeal Lee et al. "Reduced graphene oxide produced by rapid-heating reduction and its use in carbon-based field-effect transistors" Journal of Applied Physics 112 (3), 033701 (2012)
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Inyeal Lee et al. "Capacitance-voltage and current-voltage characteristics of graphite oxide thin films patterned by ultraviolet photolithography" Applied Physics Letters 95 (26), 343 (2009)
Ph.D: Lijun Li
Working: KAIST
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2010 - 2017 Researcher, Sungkyunkwan University, Suwon, Korea
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1998 - 2003 PhD Physics, Exter University
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1994 - 1997 MS Electronics, Peking University, China
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1982 - 1986 BS Electronics, Peking University, China
...
Publications
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L. Li et al. "Hole dephasing caused by hole–hole interaction in a multilayered black phosphorus" Journal of Physics: Condensed Matter 29 (43), 435302 (2017)
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L. Li et al. "Hopping conduction and random telegraph signal in an exfoliated multilayer MoS2 field-effect transistor" Nanotechnology 28 (7), 075201 (2017)
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L. Li et al."Spin diffusion and non-local spin-valve effect in an exfoliated multilayer graphene with a Co electrode" Nanotechnology 27 (33), 335201 (2016)
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L. Li et al."Raman shift and electrical properties of MoS 2 bilayer on boron nitride substrate" Nanotechnology 26 (29), 295702 (2015)
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L. Li et al. "Electron dephasing of a GaAs/AlGaAs quantum well with self- assembled InAs dots" Journal of Physics : Condensed Matter 24, 385301 (2012)
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L. Li et al."Hopping conduction and magnetoresistance of a GaAs/AlxGa1-xAs quantum well with embedded InAs dots" Physical Review B 83, 153304 (2011)
Ph.D: Moonshik Kang
Working: Samsung Electronics
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2014 - 2016 Ph.D SSIT, Sungkyunkwan University, Korea
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2001 - 2003 MS Precision Mechanical Engineering, Seoul National University, Korea
Publications
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Moonshik Kang et al. "Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate" Applied Physics Letters 106 (14), 143108 (2015)
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Moonshik Kang et al. "Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment" Nanoscale 9 (4), 1645-1652 (2017)
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Moonshik Kang et al. "Photodetector Based on Multilayer SnSe2 Field Effect Transistor" Journal of nanoscience and nanotechnology, 18 (6), 4243-4247 (2018).
Ph.D: Maaz Khan
Working: Professor, Pakistan Institute of Nuclear Science and Technology (PINSTECH), Pakistan
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2012 – 2015 Associate Professor, Pakistan Institute of Nuclear Science and Technology (PINSTECH), Pakistan
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2010 - 2012 Research Professor at Sungkyunkwan University, Suwon, South Kore
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1997 - 1999 PhD in Quaid-i-Azam University, Islamabad, Pakistan
Publications
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K. Maaz et al. "Single domain limit for NixCo1-xFe2O4 ( 0 < x < 1 ) nanoparticles synthesized by coprecipitation route" Materials Chemistry and Physics 137, 359-364 (2012)
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K. Maaz et al. "Effect of particle size on the magnetic properties of NixCo1-xFe2O4 ( x = 0.3 ) nanoparticles" Chemical Physics Letters 549, 67-71 (2012)
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K. Maaz et al. "Effect of temperature on the magnetic characteristics of Ni0.5Co0.5Fe2O4 nanoparticles" Materials Chemistry and Physics 133, 1006-1010 (2012)
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K. Maaz et al. "Effect of temperature on the exchange bias in naturally oxidized NixCo1-x ( x = 0.2 ) nanowires fabricated by electrochemical deposition technique" Journal of Alloys and Compounds 520, 272-276 (2012)
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K. Maaz et al. "Effect of aging on the magnetic characteristics of nickel nanowires embedded in polycarbonate" Journal of Applied Physics 110, 013908 (2011)
Ph.D: Singh Budhi
Working: DST-INSPIRE Faculty, Inter-University Acceralator Centre, India
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2013 - 2014 Post-Doc, Sungkyunkwan University, Suwon, Korea
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2006 - 2012 Ph.D in Physics, Jawaharlal Nehru University, India
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2003 - 2005 MS in Physics, Jawaharlal Nehru University, India
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2000 - 2003 BS in Physics, Chemistry,Math, Himachal Pradesh University, India
Publications
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Singh, Budhi, et al. "Alignment of graphene oxide nanostructures between microgap electrodes via dielectrophoresis for hydrogen gas sensing applications" Applied Physics Letters 106 (20), 203106 (2015)
Ph.D: Wang Jianwei
Working: Associate Professor in School of Bigdata and Computer Science, Guizhou Normal University, Baoshanbei Rd. 180#, Guiyang, 550001, Guizhou, China
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2009 - 2015 MS/Ph.D in Nanotechnology, Sungkyunkwan University, Korea
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2005 - 2009 BS in Harbin Institute of Technology, China
Publications
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Jianwei Wang et al. "Dielectrophoretic assembly of Pt nanoparticle-reduced graphene oxide nanohybrid for highly-sensitive multiple gas sensor" Sensors and Actuators B: Chemical 220, 755-761 (2015)
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Jianwei Wang et al. "Alternating Current Dielectrophoresis Optimization of Pt-Decorated Graphene Oxide Nanostructures for Proficient Hydrogen Gas Sensor" ACS applied materials & interfaces 7 (25), 13768-13775 (2015)
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Jianwei Wang et al. "Dielectrophoresis of graphene oxide nanostructures for hydrogen gas sensor at room temperature " Sensors and Actuators B: Chemical 194, 296-302 (2014)
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Jianwei Wang et al. "Assembly of thermally reduced graphene oxide nanostructures by alternating current dielectrophoresis as hydrogen-gas sensors" Applied Physics Letter 103, 083112 (2013)
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Jianwei Wang et al. "Highly responsive hydrogen gas sensing by partially reduced graphite oxide thin films at room temperature" Carbon 50, 4061-4067 (2012)
Ph.D: Ishrat Sultana
Working: Assistant Professor, Physics, COMSATS University Islamabad Lohore Campus
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2009 - 2013 Ph.D in Nanotechnology, Sungkyunkwan University, Korea
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2004 - 2006 MS in Government College University Faislabad, Pakistan
Publications
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S. Ishrat et al. "Fabrication and temperature-dependent magnetic properties of one-dimensional multilayer Au–Ni–Au–Ni–Au nanowires" Journal of Solid State Chemistry 210 (1), 116-120 (2014)
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S. Ishrat et al. "Nickel segment-length dependent magnetic properties of Au-Ni-Au nanowires at low temperature fabricated by electrochemical deposition " Journal of Solid State Chemistry 199, 160-163 (2013)
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S. Ishrat et al. "Fabrication and temperature-dependent magnetic properties of one-dimensional embedded nickel segment in gold nanowires" Journal of Alloys and Compounds 541, 483-487 (2012)
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S. Ishrat et al. "Magnetic properties of one-dimensional embedded nickel nanostructures in gold nanowires" Current Applied Physics 12, 65-68 (2012)
M.S: Jinhyung Park
Working: Samsung Electronic
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2012 - 2015 MS in Electronic EngineeringSungkyunkwan University, Korea
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2006 - 2012 BS in Electronic Engineering, Sungkyunkwan University, Korea
M.S: Youngreal Kwak
Working: Hyundai Chemical
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2010 - 2012 MS in Electronic Engineering, Sungkyunkwan University, Korea
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2003 - 2010 BS in Electronic Engineering, Sungkyunkwan University, Korea
Publications
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Youngreal Kwak et al."Hydrogen sensing properties of dielectrophoretically assembled SnO2 nanoparticles on CMOS-compatible micro-hotplates" Nanotechnology 22, 445501 (2011)
M.S: Le Huy Binh
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2009 - 2011 MS in Nanotechnology, Sungkyunkwan University, Korea
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2004 - 2009 BS in Hanoi University of Technology, Vietnam
...
Publications
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Binh Le Huy et al. "Manipulation of palladium nanoparticles in a 20 nm gap between electrodes for hydrogen sensor application" Journal of Physics D : Applied Physics 44, 325402 (2011)
Ph.D: E. S. Kannan
Working: Associate Professor, Physics Department BITS Pilani. K. K. Birla Goa Campus India
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2010 - 2012 Post-Doc Grenoble High Magnetic Field Laboratory, France
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2009 - 2010 Post-Doc SNDL, Sungkyunkwan University, Korea
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2006 - 2009 Ph.D Sungkyunkwan Advanced Institute of Nanotechnology (SAINT)
Sungkyunkwan University, Korea
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2001 - 2003 MS Physics, Bharathiar University , India
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2001 - 2003 BS Physics, Bharathiar University , India
Publications
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E.S. Kannan et al. "Crossover from negative to positive magnetoresistance in the double quantum well system with different starting disorder" Journal of Physics: Condensed Matter 22, 045802 (2010)
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E.S. Kannan et al. "Memory characteristics of InAs quantum dots embedded in GaAs quantum well" Applied Physics Letter 95, 143506 (2009)
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E.S. Kannan et al. "Transport mechanism in the quantum well embedded with quantum dots" Status Solidi 6, 813 (2009)
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E.S. Kannan et al. "Assembled InAs quantum dots to investigate the tunneling between edge states in AlGaAs / GaAs double quantum well system" Physica E 40, 1442 (2008)
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E.S. Kannan et al. "Charge trapping in double quantum well system" Journal of Physics : Condensed Matter 20, 455206 (2008)
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E.S. Kannan et al. "Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas" Applied Physics Letters 60, 152110 (2007)
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E.S. Kannan et al. "Experimental Evidence for Weak Insulator-Quantum Hall Transitions in GaN/AlGaN Two-Dimensional Electron Systems" Journal of the Korean Physical Society 50, 1643 (2007)
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E.S. Kannan et al. "Transport hysteresis in AlGaAs/GaAs double quantum well systems with InAs quantum dots" Journal of Physics: Condensed Matter 19, 506207 (2007)
Ph.D: Sanjeev Kumar
Working: Research Professor, University College London
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2006 - 2010 Post-Doc, Sungkyunkwan University, Suwon, Korea
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2002 - 2005 PhD Materials Science and Physics, University of Delhi
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1999 - 2001 MS Physics, University of Delhi
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1996 - 1999 BS Physics, University of Delhi
Publications
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Sanjeev Kumar et al. "ZnO based surface acoustic wave ultraviolet photo sensor" Journal of Electroceramics 22, 198-202 (2009)
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Sanjeev Kumar et al. "Manipulation and trapping of semiconducting ZnO nanoparticles into nanogap electrodes by dielectrophoresis technique" Applied Physics Letters 94, 153104 (2009)
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Sanjeev Kumar et al. "Bridging the nanogap electrodes with nanoparticles using dielectrophoresis technique" Current Applied Physics 9, 101 (2009)
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Sanjeev Kumar et al. "Mechanism of ultraviolet photoconductivity in ZnO nano-needles" Journal Physics : Condensed Matter 19, 472202 (2007)
M.S: Dong-Uk Cheon
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2008 - 2010 MS in Sungkyunkwan University, Korea
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2000 - 2008 BS in Electronic Engineering, Dong-A University, Korea
Publications
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Dong-Uk Cheon et al. "Assembly of gold nanoparticles of diffrent diameters between nanogap electrodes" Applied Physics Letter 96, 013101 (2010)
M.S: Young-Kyo Seo
Working: Samsung Electronics
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2008 - 2010 MS in Nanotechnology, Sungkyunkwan University, Korea
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2001 - 2008 BS in Advanced Materials Science & Engineering, Sungkyunkwan University, Korea
Publications
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Young-Kyo Seo et al. "Analysis of Assembling ZnO Nanoparticles Into Nanogap Electrodes for Nanoscale Electronic Device Applications"Journal of Nanoscience and Nanotechnology 11, 4852-4862 (2011)
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Young-Kyo Seo et al. "Photoconductivity characteristics of ZnO nanoparticles assembled in nanogap electrodes for portable photodetector applications" Physica E 42, 1163-1166 (2010)
M.S: Nguyen Van Hoang
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2007 - 2009 MS in Nanotechnology, Sungkyunkwan University, Korea
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2002 - 2007 BS in Material-Semiconductor, Ho Chi Minh City University of Technology
Publications
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Nguyen Van Hoang et al. "Growth of segmented gold nanorods with nanogaps by the electrochemical wet etching technique for single-electron transistor applications" Nanotechnology 20, 125607 (2009)
M.S: Seok-Hwang Yoon
Working: Samsung Electronics
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2005 - 2007 MS in Sungkyunkwan University, Korea
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1998 - 2004 BS in Electronic Engineering, Gachon University, Korea
Publications
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Yoon, Seok-Hwang, et al. "Dielectrophoretic assembly of single gold nanoparticle into nanogap electrodes." Journal of nanoscience and nanotechnology 8.7 (2008): 3427-3433.